๐”– Scriptorium
โœฆ   LIBER   โœฆ

๐Ÿ“

Power Devices for Efficient Energy Conversion

โœ Scribed by Gourab Majumdar, Ikunori Takata


Publisher
CRC Press LLC : Pan Stanford Publishing
Year
2018
Tongue
English
Leaves
347
Edition
1
Category
Library

โฌ‡  Acquire This Volume

No coin nor oath required. For personal study only.

โœฆ Synopsis


The growth of power electronics, centering on inverters and converters as its key system topology, has accelerated recently due to the demand for efficient power conversion. This growth has also been backed up by several evolutionary changes and breakthroughs achieved in the areas of power semiconductor device physics, process technology, and design. However, as power semiconductor technology remains a highly specialized subject, the literature on further research, development, and design in related fields is not adequate. With this in view, two specialists of power semiconductors, well known for their research and contributions to the field, compiled this book as a review volume focusing on power chip and module technologies. The prime purpose is to help researchers, academia, and engineers, engaged in areas related to power devices and power electronics, better understand the evolutionary growth of major power device components, their operating principles, design aspects, application features, and trends.

The book is filled with unique topics related to power semiconductors, including tips on state-of-the-art and futuristic-oriented applications. Numerous diagrams, illustrations, and graphics are included to adequately support the content and to make the book extremely attractive as a practical and user-friendly reference book for researchers, technologists, and engineers, as well as a textbook for advanced graduate-level and postgraduate students.

โœฆ Table of Contents


Content: Cover
Half title
Title
Copyright
Contents
Preface
Chapter 1 Introduction
1.1 Era Predating the Birth of Power Semiconductor Devices
1.2 Dawn of Power Electronics
1.3 Japan's Leading Effort in Power Electronics
1.4 Chronology of Power Devices in the 1980s
1.5 Chronology of Power Modules in the 1980s
1.6 History of Recent Power Switching Semiconductors
1.7 Key Role of Power Devices for Efficient Power Conversion
1.7.1 Role of Devices in Power Amplification
1.7.2 Role of Devices in Power Switching Applications
1.7.2.1 Power losses by power switches in power conversion electronics Chapter 2 Basic Technologies of Major Power Devices2.1 Power Device Categories
2.2 Key Semiconductor Operation Principles
2.2.1 Essence of the Power Device
2.2.2 Characteristics of the Semiconductor
2.2.3 p-Type and n-Type Semiconductors
2.2.4 Potential Barrier between Regions Having Different Impurity Concentrations
2.3 Basic Operation of Power Devices
2.3.1 Reverse Voltage Blocking
2.3.2 Forward Conducting
2.3.3 Voltage-Holding Ability with Large Current: SOA
2.4 Diode Rectifiers
2.4.1 Diode Structures
2.4.2 Transient Operation of a pin Diode 2.4.3 Basic Operation of a pin Diode2.4.4 High-Voltage Large-Current Operation of a pin Diode
2.5 Fast-Recovery Diode for a Typical Freewheeling Function
2.5.1 Need for First-Recovery Diodes
2.5.2 Effect of Lifetime Control
2.5.3 Control Methods of the Lifetime
2.5.4 Various Recombination Models
2.5.5 Leakage Current Caused by Lifetime Killers
2.5.5.1 Pair generation leakage current
2.5.5.2 Diffusion leakage current
2.5.6 Interpretation of Observed JF-VF Characteristics
2.6 Devices of the Thyristor Family
2.6.1 Thyristor
2.6.2 GTO/GCT
2.7 Bipolar Junction Transistors 2.7.1 BJT Structures2.7.2 Basic Operation of the BJT
2.7.3 High-Voltage Large-Current Operation of the BJT
2.7.4 Safe Operating Area of the BJT
2.8 Metal-Oxide-Semiconductor Field-Effect Transistors
2.9 Insulated Gate Bipolar Transistors
2.9.1 IGBT Structures
2.9.2 Basic Operation of the IGBT
2.9.3 High-Voltage Large-Current Operation of the IGBT
2.9.4 Safe Operating Area of the IGBT
2.9.4.1 Observation of IGBT destructions
2.9.4.2 Destruction mechanism of real IGBTs
Chapter 3 Applied Power Device Family: Power Modules and Intelligent Power Modules 3.1 Review of the Power Module Concept and Evolution History3.2 Power Module Constructional Features and Design Aspects
3.2.1 Basic Aspects of Power Module Construction and Design
3.2.1.1 What are the characteristics required from a power module package?
3.2.1.2 What are the features and issues related to typical power module package designs?
3.2.2 Fundamentals of Power Module Structural Reliability and Life Endurance
3.3 State-of-the-Art Key Power Module Components
3.3.1 Dual-in-Line Intelligent Power Module
3.3.2 Intelligent Power Module

โœฆ Subjects


Power electronics.;Energy conversion.;Semiconductors.;TECHNOLOGY & ENGINEERING / Mechanical.


๐Ÿ“œ SIMILAR VOLUMES


Materials for energy conversion devices
โœ Charles C. Sorrell, Sunao Sugihara, Janusz Nowotny ๐Ÿ“‚ Library ๐Ÿ“… 2005 ๐Ÿ› CRC Press ๐ŸŒ English

Materials for energy conversion devices opens with a detailed exploration of the fields of solar energy and thermoelectric conversion. Beginning with chapters on photoelectrochemical devices, properties and uses of photosensitive materials and solar cells it then moves its focus on thermoelectricity

Materials for Energy Conversion Devices
โœ C C Sorrell, J. Nowotny, S Sugihara ๐Ÿ“‚ Library ๐Ÿ“… 2005 ๐Ÿ› Woodhead Publishing ๐ŸŒ English

As the finite capacity and pollution problems of fossil fuels grow more pressing, new sources of more sustainable energy are being developed. Materials for energy conversion devices summarises the key research on new materials which can be used to generate clean and renewable energy or to help manag

Energy Conversion for Space Power
โœ Nathan Snyder (Eds.) ๐Ÿ“‚ Library ๐Ÿ“… 1961 ๐Ÿ› Elsevier Science ๐ŸŒ English

Energy Conversion for Space Power</div> <br> <br> Abstract: Energy Conversion for Space Power

GaN transistors for efficient power conv
โœ De Rooij, Michael; Glaser, John; Lidow, Alex; Reusch, David; Strydom, Johan ๐Ÿ“‚ Library ๐Ÿ“… 2020 ๐Ÿ› Wiley ๐ŸŒ English

GaN technology overview -- GaN transistor electrical characteristics -- Driving GaN transistors -- Layout considerations for GaN transistor circuits -- Modeling and measurement of GaN transistors -- Thermal management -- Hard-switching topologies -- Resonant and soft-switching converters -- RF perfo

GaN Transistors for Efficient Power Conv
โœ Alex Lidow, Johan Strydom, Michael de Rooij, David Reusch ๐Ÿ“‚ Library ๐Ÿ“… 2014 ๐Ÿ› Wiley ๐ŸŒ English

<p>The first edition of <i>GaN Transistors for Efficient Power Conversion</i> was self-published by EPC in 2012, and is currently the only other book to discuss GaN transistor technology and specific applications for the technology. More than 1,200 copies of the first edition have been sold through