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Postgrowth annealing of defects in ZnO studied by positron annihilation, x-ray diffraction, Rutherford backscattering, cathodoluminescence, and Hall measurements

✍ Scribed by Chen, Z. Q.; Yamamoto, S.; Maekawa, M.; Kawasuso, A.; Yuan, X. L.; Sekiguchi, T.


Book ID
115526089
Publisher
American Institute of Physics
Year
2003
Tongue
English
Weight
315 KB
Volume
94
Category
Article
ISSN
0021-8979

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