Growth and characterization of AlGaAs/Ga
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F. Scheffer; M. Joseph; W. Prost; F.J. Tegude; H. Lakner; S. Zumkley; G. Wingen;
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Article
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1991
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Elsevier Science
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English
⚖ 374 KB
Using a low-pressure metal-organic vapour phase epitaxy reactor, Bragg reflector structures were grown consisting of an AIGaAs/GaAs multilayer stack with up to 20 periods on top of a GaAs substrate. Each layer exhibited a constant optical length of a quarter of the desired wavelength. The numerical