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Possible Mechanism of a New Type of Three-Dimensional Quantized Hall Effect in Layered Semiconductors Bi2−xSnxTe3

✍ Scribed by N. Miyajima; M. Sasaki; H. Negishi; M. Inoue; V. A. Kulbachinskii; A. Y. Kaminskii; K. Suga

Book ID
110363030
Publisher
Springer US
Year
2001
Tongue
English
Weight
457 KB
Volume
123
Category
Article
ISSN
0022-2291

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