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Positron annihilation spectroscopy of vacancy-related defects in semiconductors

✍ Scribed by C. Corbel; K. Saarinen; P. Hautojärvi


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
695 KB
Volume
25
Category
Article
ISSN
0960-8974

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The Doppler broadening spectrum of a silicon wafer was measured using a variable-energy positron beam to investigate the effects of vacancy-type defects induced by 180 keV Ar ion implantation. The Sparameter in the damaged layer decreases with annealing temperature up to 673 K, and then increases wi