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Position-sensitive Si pad detectors for electron emission channeling experiments

โœ Scribed by U. Wahl; J.G. Correia; A. Czermak; S.G. Jahn; P. Jalocha; J.G. Marques; A. Rudge; F. Schopper; J.C. Soares; A. Vantomme; P. Weilhammer

Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
752 KB
Volume
524
Category
Article
ISSN
0168-9002

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Position sensitive detectors for ion ele
Position sensitive detectors for ion electron emission microscopy
โœ D. Bisello; A. Candelori; P. Giubilato; A. Kaminsky; S. Mattiazzo; M. Nigro; D. ๐Ÿ“‚ Article ๐Ÿ“… 2007 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 228 KB

At the INFN Legnaro Laboratories (Padova, Italy), an ion electron emission microscope dedicated to the study of radiation-induced damage in microelectronic devices has been recently installed. It is used to recognize, with micrometric resolution, the impact point of every single ion into the target.