Porous silicon - rare earth doped xerogel and glass composites
β Scribed by Balakrishnan, S. ;Gun'ko, Yurii K. ;Perova, T. S. ;Rafferty, A. ;Astrova, E. V. ;Moore, R. A.
- Publisher
- John Wiley and Sons
- Year
- 2005
- Tongue
- English
- Weight
- 128 KB
- Volume
- 202
- Category
- Article
- ISSN
- 0031-8965
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β¦ Synopsis
Abstract
The development of components for photonics applications is growing exponentially. The solβgel method is now recognised as a convenient and flexible way to deposit oxide or glass films on a variety of hosts, including porous silicon. In the present work we incorporated erbium and europium doped xerogel into porous silicon and developed new porous silicon β rare earth doped glass composites. Various characterisβation techniques including FTIR, Raman Spectroscopy, Thermal Gravimetric Analysis and Scanning Electron Microscopy were employed in this work. (Β© 2005 WILEYβVCH Verlag GmbH & Co. KGaA, Weinheim)
π SIMILAR VOLUMES
## Abstract Porous silicon (PS) is doped with rare earth (RE) ions (Er, Eu, Tb) by electrochemical anodisation. The penetration of RE into the PS layer is confirmed by Rutherford Backscattering Spectroscopy (RBS) and by Energy Dispersive Xβray (EDX) measurements. Efficient visible and infrared emis