## Abstract Metal‐assisted etching is used in conjunction with block‐copolymer lithography to create ordered and densely‐packed arrays of high‐aspect‐ratio single‐crystal silicon nanowires with uniform crystallographic orientations. Nanowires with diameters and spacings down to 19 nm and 10 nm, res
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Polypyrrole Nanowire Array with High Aspect Ratio Fabricated by Block-Copolymer-Templated Electropolymerization
✍ Scribed by Komiyama, Hideaki; Iyoda, Tomokazu; Kamata, Kaori
- Book ID
- 118235001
- Publisher
- Cambridge University Press
- Year
- 2011
- Weight
- 498 KB
- Volume
- 1312
- Category
- Article
- ISSN
- 0272-9172
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