Poly(3-hexylthiophene)-zinc oxide rectifying junctions

✍ Scribed by S. Marchant; P. J. S. Foot

• Book ID: 104657239
• Publisher: Springer US
• Year: 1995
• Tongue: English
• Weight: 379 KB
• Volume: 6
• Category: Article
• ISSN: 0957-4522
• DOI: 10.1007/bf00190545

✦ Synopsis

The rectifying junction formed at the interface of solvent-cast, as-prepared poly(3hexylthiophene) (P3HT) and conductive ZnO-coated glass was investigated by recording the /-Vand C-Vcharacteristics. The data have been discussed in terms of the Schottky thermionic-emission current transport model. The diode "quality factor" determined for these devices was 3.6, and indicated imperfect model fitting. The Schottky barrier was estimated as 0.93 eV. A negative differential resistance regime was observed for P3HT/ZnO devices under reverse-bias high-field conditions. This effect was concluded to be a filament-formation burnout failure process.