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Poly(2-vinylnaphthalene)-block-poly(acrylic acid) Block Copolymer: Self-Assembled Pattern Formation, Alignment, and Transfer into Silicon via Plasma Etching

✍ Scribed by Xin Zhang; Christopher J. Metting; Robert M. Briber; Florian Weilnboeck; Sang Hak Shin; Benjamin G. Jones; Gottlieb S. Oehrlein


Publisher
John Wiley and Sons
Year
2011
Tongue
English
Weight
639 KB
Volume
212
Category
Article
ISSN
1022-1352

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✦ Synopsis


Abstract

P2VN‐b‐PAA is a novel diblock copolymer which has potential as a self‐assembled nanoscale patterning material. Thin spin cast P2VN‐b‐PAA films rapidly reorganize to vertical lamellar with exposure to acetone vapor. P2VN‐b‐PAA lamellar morphology was aligned by electric field under acetone vapor at a significantly faster rate and at lower electric field strengths than other polymer systems. Observed dry etching selectivity for P2VN to PAA were comparatively high for a variety of etch gases, consistent with estimations from Ohnishi and ring parameters. Block copolymer self assembled patterns were transferred to silicon via two‐step CF~4~ and SF~6~ etching. magnified image