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Polarization-sensitive ultraviolet photodetectors based on M-plane GaN grown on LiAlO[sub 2] substrates

✍ Scribed by Rivera, C.; Pau, J. L.; Muñoz, E.; Misra, P.; Brandt, O.; Grahn, H. T.; Ploog, K. H.


Book ID
120452289
Publisher
American Institute of Physics
Year
2006
Tongue
English
Weight
370 KB
Volume
88
Category
Article
ISSN
0003-6951

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Optically induced carrier dynamics was investigated in highly excited m-plane GaN films grown by metalorganic vapor phase epitaxy (MOVPE) on LiAlO 2 substrates and compared to a c-plane GaN reference. Photoluminescence (PL) spectra showing spontaneous and stimulated emission (SE) were investigated a