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Point defects in neutron-irradiated phenakite

โœ Scribed by L. A. Blaginina; V. A. Kalent'ev; F. M. Klinov


Publisher
Springer US
Year
1988
Tongue
English
Weight
399 KB
Volume
49
Category
Article
ISSN
0021-9037

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Point defects reactions in ion irradiate
โœ G. Litrico; M. Zimbone; G. Baratta; A.D.M. Marino; P. Musumeci; L. Calcagno ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 470 KB

The defects produced in 4H-SiC epitaxial layers by irradiation with 800 keV C + were characterized by Low Temperature Photoluminescence. Ion beam irradiation induces the formation of some sharp lines in the wavelength range 428-441 nm of the photoluminescence spectra, that are typically known as ''a