Plasma processes for semiconductor fabrication
โ Scribed by W. N. G. Hitchon
- Publisher
- CUP
- Year
- 1999
- Tongue
- English
- Leaves
- 231
- Category
- Library
No coin nor oath required. For personal study only.
โฆ Synopsis
Plasma processing is a central technique in the fabrication of semiconductor devices. This self-contained book provides an up-to-date description of plasma etching and deposition in semiconductor fabrication. It presents the basic physics and chemistry of these processes, and shows how they can be accurately modeled. The author begins with an overview of plasma reactors and discusses the various models for understanding plasma processes. He then covers plasma chemistry, addressing the effects of different chemicals on the features being etched. Having presented the relevant background material, he then describes in detail the modeling of complex plasma systems, with reference to experimental results. The book closes with a useful glossary of technical terms. No prior knowledge of plasma physics is assumed in the book. It contains many homework exercises and serves as an ideal introduction to plasma processing and technology for graduate students of electrical engineering and materials science. It will also be a useful reference for practicing engineers in the semiconductor industry.
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Plasma processing is a central technique in the fabrication of semiconductor devices. This self-contained book provides an up-to-date description of plasma etching and deposition in semiconductor fabrication. It presents the basic physics and chemistry of these processes, and shows how they can be a
Plasma processing is a central technique in the fabrication of semiconductor devices. This self-contained book provides an up-to-date description of plasma etching and deposition in semiconductor fabrication. It presents the basic physics and chemistry of these processes, and shows how they can be a
<p><em>Plasma Processing of Semiconductors</em> contains 28 contributions from 18 experts and covers plasma etching, plasma deposition, plasma-surface interactions, numerical modelling, plasma diagnostics, less conventional processing applications of plasmas, and industrial applications. <br/><em>Au
<strong>Article. Material Science and engineering, R 17 (1996) 207-<br/>280. </strong><br/>Annotation: Mono-energetic plasma immersion ion implantation (PIII) into silicon can be attained only under collisionless plasma conditions. In order to reduce the current load on the high voltage power supply