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Planarization of emitter-base structure of heterojunction bipolar transistors by doping selective base contact and nonalloyed emitter contact

โœ Scribed by Goossen, K.W.; Kuo, T.Y.; Cunningham, J.E.; Jan, W.Y.; Ren, F.; Fonstad, C.G.


Book ID
114538916
Publisher
IEEE
Year
1991
Tongue
English
Weight
451 KB
Volume
38
Category
Article
ISSN
0018-9383

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