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Planarization of emitter-base structure of heterojunction bipolar transistors by doping selective base contact and nonalloyed emitter contact

✍ Scribed by Goossen, K.W.; Kuo, T.Y.; Cunningham, J.E.; Jan, W.Y.; Ren, F.; Fonstad, C.G.

No coin nor oath required. For personal study only.

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