Heterostructures of Si 0.80 Ge 0.20 /Si (100) were grown by pulsed laser deposition consisting of alternating 10 nm SiGe and silicon layers for a total of 10 periods. The presence of alloy clustering at SiGe/Si interfaces was investigated by parallel transport in transistor structures. Photoluminesc
Piezoelectric fields in one- and two-dimensional heterostructures fabricated on high-index surfaces
โ Scribed by Liberato De Caro; Leander Tapfer
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 409 KB
- Volume
- 26
- Category
- Article
- ISSN
- 0026-2692
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