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Picosecond measurements of exciton trapping in semiconductor clusters

โœ Scribed by Mike O'Neil; John Marohn; George McLendon


Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
242 KB
Volume
168
Category
Article
ISSN
0009-2614

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โœฆ Synopsis


The formation of deep traps in 30 A CdS semiconductor clusters has been time resolved using picosecond single-photon counting. The trapping rates, measured by the risetime of recombinate or emission, vary inversely with trap depth ranging from 2 30 ps above 500 nm to -z 10 ps near the band edge. These rates depend very weakly on temperature, decreasing only two-fold from 100 to 4.8 K. The observed rates are most easily explained by rapid trapping into near band edge traps, followed by slower trapto-trap diffusion until a deep trap is encountered.


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