Picosecond measurements of exciton trapping in semiconductor clusters

✍ Scribed by Mike O'Neil; John Marohn; George McLendon

• Publisher: Elsevier Science
• Year: 1990
• Tongue: English
• Weight: 242 KB
• Volume: 168
• Category: Article
• ISSN: 0009-2614
• DOI: 10.1016/0009-2614(90)85131-u

✦ Synopsis

The formation of deep traps in 30 A CdS semiconductor clusters has been time resolved using picosecond single-photon counting. The trapping rates, measured by the risetime of recombinate or emission, vary inversely with trap depth ranging from 2 30 ps above 500 nm to -z 10 ps near the band edge. These rates depend very weakly on temperature, decreasing only two-fold from 100 to 4.8 K. The observed rates are most easily explained by rapid trapping into near band edge traps, followed by slower trapto-trap diffusion until a deep trap is encountered.