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Physically processed Ag-doped ZnO nanowires for all-ZnO p–n diodes

✍ Scribed by Song, Yong-Won; Kim, Kyoungwon; Ahn, Jae Pyoung; Jang, Gun-Eik; Lee, Sang Yeol


Book ID
119948934
Publisher
Institute of Physics
Year
2009
Tongue
English
Weight
573 KB
Volume
20
Category
Article
ISSN
0957-4484

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## Abstract A high quality transparent p–n heterojunction device comprised of 1D zinc oxide (ZnO) nanorods (NRs) and an ultrathin 2D graphene oxide (GO):carbon nanotube (CNT) hybrid film was fabricated through a solution process. The turn on voltage and ideality factor of the device were 1.5 V and