An accurate knowledge of the behavior of Arsenic appearing at high concentrations during thermal processes is essential for today's CMOS technology so that As is the most widely used n-type Si dopant in ultralarge scale integrated circuits. In spite of the large amount of successful research work de
Physically based modelling of remanent creep life
β Scribed by B.F. Dyson; F.A. Leckie
- Publisher
- Elsevier Science
- Year
- 1988
- Tongue
- English
- Weight
- 308 KB
- Volume
- 103
- Category
- Article
- ISSN
- 0921-5093
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