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Physically based compact device models for circuit modelling applications

✍ Scribed by P.A. Mawby; P.M. Igic; M.S. Towers

Book ID
108360781
Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
963 KB
Volume
32
Category
Article
ISSN
0026-2692

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πŸ“œ SIMILAR VOLUMES

Physically based 2D compact model for po
Physically based 2D compact model for power bipolar devices
✍ P. M. Igic; M. S. Towers; P. A. Mawby πŸ“‚ Article πŸ“… 2004 πŸ› John Wiley and Sons 🌐 English βš– 157 KB

## Abstract The two‐dimensional (2D) physical compact model for advanced power bipolar devices such as injection enhanced gate transistor (IEGT) or Trench IGBT is presented in this paper. In order to model the complex 2D nature of these devices the ambipolar diffusion equation has been solved simul