Physically based analytical model for plateau in gate C-V characteristics of strained silicon pMOSFET

✍ Scribed by Wang, Bin; Zhang, He-ming; Hu, Hui-yong; Zhang, Yu-ming; Zhou, Chun-yu; Li, Yu-chen

• Book ID: 121625854
• Publisher: Central South University
• Year: 2013
• Tongue: English
• Weight: 543 KB
• Volume: 20
• Category: Article
• ISSN: 2095-2899
• DOI: 10.1007/s11771-013-1745-y