Crystal growth of a certain polytype of SiC in a process of physical vapor transport was studied on the basis of classical thermodynamic nucleation theory in conjunction with numerical results obtained from a global model. Formation of a certain polytype in the nucleation stage is determined by the
β¦ LIBER β¦
Physical Vapor Transport Growth and Properties of SiC Monocrystals of 4H Polytype
β Scribed by G. Augustine; McD. Hobgood; V. Balakrishna; G. Dunne; R. H. Hopkins
- Publisher
- John Wiley and Sons
- Year
- 1997
- Tongue
- English
- Weight
- 535 KB
- Volume
- 202
- Category
- Article
- ISSN
- 0370-1972
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