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Physical nature of grown-in microdefects in Czochralski-grown silicon and their transformation during various technological effects

โœ Scribed by Talanin, V. I. ;Talanin, I. E.


Book ID
105362494
Publisher
John Wiley and Sons
Year
2003
Tongue
English
Weight
499 KB
Volume
200
Category
Article
ISSN
0031-8965

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Some impurities are known to modify the properties of grown-in microdefects in Si crystals at relatively low concentrations when the only operating mechanism is trapping of either vacancies (V) or self-interstitials (I), or both, by the major impurity state. First of all, doping affects the critical