𝔖 Bobbio Scriptorium
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Physical model of drain conductance, gd, degradation of NMOSFET's due to interface state generation by hot carrier injection

✍ Scribed by Kurachi, I.; Nam Hwang; Forbes, L.


Book ID
114535736
Publisher
IEEE
Year
1994
Tongue
English
Weight
562 KB
Volume
41
Category
Article
ISSN
0018-9383

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