Physical Description of Quasi-Saturation and Impact-Ionization Effects in High-Voltage Drain-Extended MOSFETs

✍ Scribed by Lei Wang; Jun Wang; Chao Gao; Jian Hu; Li, P.; Wenjun Li; Yang, S.H.Y.

• Book ID: 114619316
• Publisher: IEEE
• Year: 2009
• Tongue: English
• Weight: 489 KB
• Volume: 56
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2008.2011575