Photovoltaic properties of the organic–inorganic photodiode based on polymer and fullerene blend for optical sensors

✍ Scribed by Fahrettin Yakuphanoglu

• Publisher: Elsevier Science
• Year: 2008
• Tongue: English
• Weight: 724 KB
• Volume: 141
• Category: Article
• ISSN: 0924-4247
• DOI: 10.1016/j.sna.2007.10.023

✦ Synopsis

Inorganic-organic photodiode was fabricated with blend single layer as well as sandwich structure, using p-Si and poly(2-methoxy-5-(20-ethylhexyloxy)-1,4-phenylenevinylene) (MEH-PPV):fullerene-C 60 blend. Electronic parameters such as barrier height, diode ideality factor, series resistance and shunt resistance were determined from the I-V characteristic in the dark of p-Si/C 60 :MEH-PPV diode and were found to be 0.75 eV, 1.36, 6.26 × 10 5 , 1.40 × 10 10 , respectively. The interface state density and time constant of p-Si/C 60 :MEH-PPV diode were determined to be 2.55 × 10 11 eV -1 cm -2 and 1.81 × 10 -6 s, respectively. The photoconductivity sensitivity and responsivity values of the diode were found to be 8.16 × 10 -6 S m/W and 1.63 × 10 -2 A/W, respectively. The p-Si/C 60 :MEH-PPV diode indicates a photovoltaic behaviour with a maximum open circuit voltage V oc of 130 mV and short-circuit current I sc of 24.5 nA. The photocurrent of the device was found to be 2.94 A and photoconductivity mechanism of the p-Si/C 60 :MEH-PPV diode indicates the existence of continuous distribution of trap centres. It is evaluated that the p-Si/C 60 :MEH-PPV photovoltaic device can be operated as a heterojunction photodiode.