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Photovoltaic effect in a type II cascadable heterostructure

✍ Scribed by R. Teissier; M. Jezewski; F. Mollot; R. Planel


Book ID
102618588
Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
142 KB
Volume
13
Category
Article
ISSN
0749-6036

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✦ Synopsis


We discuss the necessary conditions to obtain a photovoltaic effect in type- (\Pi) structures. On this basis we design a type-II GaAs/GaAlAs/AlAs asymmetric unit cell, which is cascadable. In a n-i-n diode containing this unit cell, we observe a photovoltage, with spectrally dependent sign. The photovoltage excitation spectrum is compared with photoluminescence and excitation of luminescence spectra. This effect is associated with spatial separation of photocreated electrons and holes in spectrally selected regions of the structure.


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An exact analytical representation has been obtained for electron eigenstates in the full isotropic 8-band Kane model and applied to calculate the depopulation rate of the lower lasing state in the active region of a type-II intersubband cascade laser. We show that interband tunneling rate takes its