## Abstract We present the investigations of interdiffusion in InGaAsP multiple‐quantum‐well (MQW) structures using photoreflectance (PR) and photoluminescence (PL) measurements. It is found that the degree of compositional intermixing induced by the processes of ion implantation and rapid thermal
Photoreflectance study of the interdiffusion effects in the InGaAsP-based quantum well laser structures
✍ Scribed by R. Kudrawiec; G. Sęk; K. Ryczko; W. Rudno-Rudziński; J. Misiewicz; J. Wojcik; B.J. Robinson; D.A. Thompson; P. Mascher
- Book ID
- 104428470
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 268 KB
- Volume
- 17
- Category
- Article
- ISSN
- 1386-9477
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
## Abstract Photoreflectance (PR) and photoluminescence (PL) spectroscopies have been used to study the effect of the rapid thermal annealing (RTA) on InGaAsP‐based quantum wells (QWs) which are the active part of a laser structure tailored at 1.5 µm. In the case of PL, it has been observed that th
## Abstract We present a room temperature photoreflectance (PR) investigation of GaAsSb/GaAs/AlGaAs quantum well (QW) structures grown on GaAs substrates by molecular beam epitaxy. We encounter strong low energy interference oscillations (LEIO), which tend to obscure any PR signals arising from the