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Photoreflectance study of the electronic structure of Si-doped InyGa1−yAs1−xNx films with x < 0.012

✍ Scribed by Y.-S. Kang; L. H. Robins; A. G. Birdwell; A. J. Shapiro; W. R. Thurber; M. D. Vaudin; M. M. E. Fahmi; D. Bryson; S. N. Mohammad

Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
257 KB
Volume
2
Category
Article
ISSN
1862-6351

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