Photophysical properties of nano Si/SiOx composites in Al/composite/mono Si structures for green light emitting and photodetector-Schottky diodes
✍ Scribed by E Buzaneva; A Gorchinsky; G Popova; T Veblaya; S Zankovych; Yu Boiko; P Zolotarenko; V Pogorelov; V Bukalo; A Benilov; S Lazarouk; S Beyliss; A Starovoitov; A Senkevich
- Publisher
- Elsevier Science
- Year
- 2000
- Tongue
- English
- Weight
- 223 KB
- Volume
- 3
- Category
- Article
- ISSN
- 1369-8001
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✦ Synopsis
The concept of the self-formation of a nanocrystallite (nc-) Si/SiO x : Si z O y Al nanocomposite at the Al/oxidized porous silicon interface in the result of solid-phase processes between Al and oxidized porous Si (PS) and the influence of its composition on photophysical properties were developed and experimentally confirmed for the Si chip with optical intra-chip interconnect consisting of light emitting and photodetector diodes and alumina waveguide on oxidized PS surface with aluminum electrodes. The peculiarities of nanocomposite photophysical properties (the refractive index, photoluminiscence (PL) peak situation, PL spectrum shape in the green range) have been shown to be due to the quantum confinement effects (revealed by XPS, Raman spectroscopy) and depend on the Al presence in the nanocomposite (obtained by XPS, IR spectroscopy). The experimental confirmation of this concept is (i) the shift of the nc-Si valence band relatively to that of monocrystalline Si (c-Si) on 0.2-0.7 eV for nc-Si size in 2.5-6.5 nm range; (ii) the decrease of Si nanocrystallite size in the Al presence; (iii) the approach of the value of the refractive index of nc-Si : SiO : Si 2 O 3 : Si z O y Al nanocomposite at l=236 nm to that of porous Si with 45% porosity and (iv) the stable green PL spectra in the Si z O y Al presence in the nanocomposite.