✦ LIBER ✦

Photoluminescence up to 1.6 μm of quantum dots with an increased effective thickness of the InAs layer

✍ Scribed by M. N. Drozdov; N. V. Vostokov; V. M. Danil’tsev; Yu. N. Drozdov; L. D. Moldavskaya; A. V. Murel’; V. I. Shashkin

Book ID: 111443985
Publisher: Springer
Year: 2008
Tongue: English
Weight: 319 KB
Volume: 42
Category: Article
ISSN: 1063-7826
DOI: 10.1134/s106378260803010x

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Engineering carrier confinement potentia

Engineering carrier confinement potentials in 1.3-μm InAs/GaAs quantum dots with InAlAs layers: Enhancement of the high-temperature photoluminescence intensity

✍ Liu, H. Y.; Sellers, I. R.; Hopkinson, M.; Harrison, C. N.; Mowbray, D. J.; Skol 📂 Article 📅 2003 🏛 American Institute of Physics 🌐 English ⚖ 242 KB

Thermal annealing effects on photolumine

Thermal annealing effects on photoluminescence properties of vertically stacked InAs/GaAs quantum dots with optimized spacer layer thickness

✍ B. Ilahi; L. Sfaxi; G. Bremond; M. Hjiri; H. Maaref 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 148 KB

Theoretical optimization of multi-layer

Theoretical optimization of multi-layer InAs/GaAs quantum dots subject to post-growth thermal annealing for tailoring the photoluminescence emission beyond 1.3 μm

✍ Ghosh, K.; Naresh, Y.; Srichakradhar Reddy, N. 📂 Article 📅 2012 🏛 American Institute of Physics 🌐 English ⚖ 867 KB

Optimization of the temperature mode of

Optimization of the temperature mode of metal-organic chemical vapor deposition of the InAs(N) quantum dots on GaAs (001) with intense photoluminescence at 1.3 μm

✍ V. I. Shashkin; V. M. Danil’tsev; M. N. Drozdov; Yu. N. Drozdov; D. M. Gaponova; 📂 Article 📅 2006 🏛 Springer 🌐 English ⚖ 213 KB