Photoluminescence under magnetic field and hydrostatic pressure for probing the electronic properties of GaAsN

✍ Scribed by Polimeni, A. ;Pettinari, G. ;Trotta, R. ;Masia, F. ;Felici, M. ;Capizzi, M. ;Lindsay, A. ;O'Reilly, E. P. ;Niebling, T. ;Stolz, W. ;Klar, P. J. ;Martelli, F. ;Rubini, S.

• Publisher: John Wiley and Sons
• Year: 2008
• Tongue: English
• Weight: 365 KB
• Volume: 205
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200777462

✦ Synopsis

Abstract

The puzzling electronic properties of GaAsN have been investigated through the compositional dependence of two highly sensitive band structure parameters: the electron effective mass, m~e~, and the electron gyromagnetic factor, g~e~. In the N concentration range from 0% to 0.7%, both m~e~ and g~e~ show a highly nonlinear dependence on N composition that can be explained in terms of alternating on‐ and off‐resonance conditions between the red‐shifting conduction band edge and specific energy‐pinned N cluster states. Furthermore, the electronic properties of the material are studied under hydrostatic pressure, P. This allows tuning in a same sample the interaction between extended and localized states and disclosing a hierarchy between different nitrogen complexes as regards the extent of the perturbation these complexes exert on the electronic properties of the GaAs host crystal. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)