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Photoluminescence study of deep levels in Cr-doped ZnSe

โœ Scribed by Bhaskar, S.; Dobal, P. S.; Rai, B. K.; Katiyar, R. S.; Bist, H. D.; Ndap, J.-O.; Burger, A.

Book ID
120184241
Publisher
American Institute of Physics
Year
1999
Tongue
English
Weight
354 KB
Volume
85
Category
Article
ISSN
0021-8979

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The effects of tin doping on the deep-level photoluminescence (PL) spectra of (LEC) InP were studied. Specifically, the effect of rapid thermal annealing (RTA) on the deep emission bands labelled as band A (1.13 eV), band B (1.06 eV), band C (1.20 eV) and band D (0.97 eV) were investigated. Band A a