Photoluminescence studies on the layer semiconductor In2Se3
β Scribed by M. Balkanski; C. Julien; A. Chevy; K. Kambas
- Publisher
- Elsevier Science
- Year
- 1986
- Tongue
- English
- Weight
- 291 KB
- Volume
- 59
- Category
- Article
- ISSN
- 0038-1098
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π SIMILAR VOLUMES
The emission band spectra of undoped Tl 2 In 2 Se 3 S layered crystals have been studied in the temperature range of 25-63 K and the wavelength region of 570-700 nm. A broad photoluminescence band centered at 633 nm (1.96 eV) was observed at T ΒΌ 25 K. Variation of emission band has been studied as a
This work reports on a study of the infrared active long-wavelength optical phonons of the layered semiconductor ln2Se 3. The temperature dependence behaviour is investigated between 10 K and 500 K, and the intermediate phases a'-and fl'-ln2Se 3 are evidenced by reflectivity measurements for the E Β±