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Photoluminescence properties of Tb3+ in porous silicon

✍ Scribed by H. Elhouichet; A. Moadhen; M. Oueslati; M. Férid

Book ID
108344356
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
370 KB
Volume
97
Category
Article
ISSN
0022-2313

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Photoluminescence mechanisms of Tb3+-dop
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✍ Elhouichet, H. ;Oueslati, M. ;Lorrain, N. ;Langa, S. ;Tiginyanu, I. M. ;Föll, H. 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 154 KB

## Abstract Porous GaP (por‐GaP) samples are doped with terbium ions (Tb^3+^) by simple impregnation followed by high‐temperature annealing. From scanning electron microscopy (SEM) and energy dispersive X‐ray (EDX) analysis, we show that the por‐GaP skeleton is conserved and the Tb^3+^ ions are uni