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Photoluminescence properties of GaAs nanowire ensembles with zincblende and wurtzite crystal structure

✍ Scribed by B. V. Novikov; S. Yu. Serov; N. G. Filosofov; I. V. Shtrom; V. G. Talalaev; O. F. Vyvenko; E. V. Ubyivovk; Yu. B. Samsonenko; A. D. Bouravleuv; I. P. Soshnikov; N. V. Sibirev; G. E. Cirlin; V. G. Dubrovskii

Book ID
112183020
Publisher
John Wiley and Sons
Year
2010
Tongue
English
Weight
464 KB
Volume
4
Category
Article
ISSN
1862-6254

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## Abstract We have reported the preparation of ZnO‐coated GaN nanowires and investigated changes in the structural and photoluminescence (PL) properties by the application of a thermal annealing process. For fabricating the core‐shell nanowires, Zn target was used to sputter ZnO shell onto GaN cor