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Photoluminescence of ion-implanted GaN

✍ Scribed by Pankove, J. I.


Book ID
120501136
Publisher
American Institute of Physics
Year
1976
Tongue
English
Weight
485 KB
Volume
47
Category
Article
ISSN
0021-8979

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As-grown highly resistive (>10 7 W cm) GaN samples were exposed to implantation of 24 Mg + ions with the energy of 120 keV and dose of 2 Γ‚ 10 14 cm --2 . Isochronal rapid thermal annealing (RTA) was carried out for the Mg-implanted samples at 850, 950 and 1050 C, respectively. Under z(x, x)z 0 backs