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Photoluminescence of inert-gas ion implanted sapphire after 230-MeV Pb ion irradiation

✍ Scribed by Y. Song; C.H. Zhang; Z.G. Wang; Y.M. Sun; J.L. Duan; Z.M. Zhao


Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
204 KB
Volume
245
Category
Article
ISSN
0168-583X

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Photoluminescence (PL) of sapphire irradiated with 200 MeV swift Ag 8+ ions with fluence ranging from 1 β€’ 10 11 to 1 β€’ 10 13 ions/cm 2 have been studied at room temperature. The fluence dependent behavior of PL intensities for emission band at 547 nm and a well-known sharp doublet peaks at 693.9 nm