Photoluminescence of a-GeN alloys doped with different rare-earth ions
โ Scribed by C.T.M. Ribeiro; A.R. Zanatta
- Book ID
- 116667761
- Publisher
- Elsevier Science
- Year
- 2004
- Tongue
- English
- Weight
- 434 KB
- Volume
- 338-340
- Category
- Article
- ISSN
- 0022-3093
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The measurements of VUV-UV photoluminescence emission (PL) and photoluminescence excitation (PLE) spectra of rare earth ions activated strontium orthophosphate [Sr 3 (PO 4 ) 2 :RE, RE = Ce, Sm, Eu, Tb] are performed. Whenever the samples are excited by VUV or UV light, the typical emission of Ce 3+
## Abstract The implantation damage and rare earth (RE) luminescence in the wide band gap ternaries AlGaN and AlInN were studied and compared to GaN. For both ternaries lower damage levels were observed and in contrast to GaN, no surface amorphisation occurs during the implantation. Damage recovery