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Photoluminescence investigation of the tunnelling dynamics of holes and electrons in a p-type AlAs/GaAs resonant tunnelling structure

✍ Scribed by H Käß; W Schuddinck; E Goovaerts; C Van Hoof; G Borghs

Book ID
114155908
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
314 KB
Volume
43-44
Category
Article
ISSN
0167-9317

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## Abstract We have fabricated magnetic III–V compound semiconductor resonant tunnelling diodes (RTD's) based on a (Ga, Mn)As material system. The RTD's contain a ferromagnetic Mn‐doped emitter, where the Mn‐concentration was chosen on both sides of the metal–insulator (M–I) transition. The measure