Effect of chemical etching combined with
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J.Q. Duan; B.R. Zhang; L.Z. Zhang; J.C. Mao; G.G. Qin
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Article
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1993
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Elsevier Science
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English
โ 174 KB
We have fabricated porous silicon layers (PSLs) in the anodizing solution, HF(48wt.\%): \(\mathrm{H}_{2} \mathrm{O}=1: 1\). After anodization, the PSL was etched in the same chemical solution as used for anodization and then illuminated with the \(476.5 \mathrm{~nm}\) line, with a power of \(20 \mat