Photoluminescence from Si-capped GeSn nanodots on Si substrates formed using an ultrathin SiO[sub 2] film technique

✍ Scribed by Nakamura, Yoshiaki; Fujinoki, Norihiko; Ichikawa, Masakazu

• Book ID: 121084566
• Publisher: American Institute of Physics
• Year: 2009
• Tongue: English
• Weight: 808 KB
• Volume: 106
• Category: Article
• ISSN: 0021-8979
• DOI: 10.1063/1.3159902