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Photoluminescence characterization of GaxIn1−xAs (0 ≤ x ≤ 0.32) strained quantum wells grown on InP by chemical beam epitaxy

✍ Scribed by T. Uchida; Toshi K. Uchida; N. Yokouchi; T. Miyamoto; F. Koyama; K. Iga


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
423 KB
Volume
120
Category
Article
ISSN
0022-0248

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