✦ LIBER ✦

Photoluminescence characteristics of Pb-doped, molecular-beam-epitaxy grown ZnSe crystal layers

✍ Scribed by Mita, Yoh; Kuronuma, Ryoichi; Inoue, Masanori; Sasaki, Shoichiro; Miyamoto, Yoshinobu

Book ID: 127314101
Publisher: American Institute of Physics
Year: 2004
Tongue: English
Weight: 425 KB
Volume: 96
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.1769101

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Characteristics of Cl-doped ZnSe layers

Characteristics of Cl-doped ZnSe layers grown by molecular-beam epitaxy

✍ Ohkawa, K.; Mitsuyu, T.; Yamazaki, O. 📂 Article 📅 1987 🏛 American Institute of Physics 🌐 English ⚖ 650 KB

Photoluminescence properties of nitrogen

Photoluminescence properties of nitrogen-doped ZnSe layers grown by molecular beam epitaxy with ion- and radical-beam doping techniques

✍ K. Ohkawa; T. Mitsuyu 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 555 KB

Characteristics of deep levels in Al-dop

Characteristics of deep levels in Al-doped ZnSe grown by molecular beam epitaxy

✍ D.C Oh; J.S Song; J.H Chang; T Takai; T Hanada; M.W Cho; T Yao 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 205 KB

Photoluminescence decay measurements of

Photoluminescence decay measurements of n‐ and p‐type doped ZnSe grown by molecular beam epitaxy

✍ Massa, J. S.; Buller, G. S.; Walker, A. C.; Simpson, J.; Prior, K. A.; Cavenett, 📂 Article 📅 1994 🏛 American Institute of Physics 🌐 English ⚖ 627 KB

Photoluminescence characterisation of in

Photoluminescence characterisation of indium-doped and undoped silicon layers grown by molecular beam epitaxy

✍ Henry, A; Ni, W -X; Hasan, M -A; Hansson, G V; Monemar, B 📂 Article 📅 1990 🏛 Institute of Physics 🌐 English ⚖ 441 KB

Selective doping of N-type ZnSe layers w

Selective doping of N-type ZnSe layers with chlorine grown by molecular beam epitaxy

✍ Ziqiang Zhu; Takafumi Yao; Hiroshi Mori 📂 Article 📅 1993 🏛 Springer US 🌐 English ⚖ 776 KB