Photoluminescence and radiation effect of Er and Pr implanted silicon-rich silicon oxide thin films
β Scribed by Fang Zhu; Zhisong Xiao; Lu Yan; Feng Zhang; Kun Zhong; Guoan Cheng
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 429 KB
- Volume
- 267
- Category
- Article
- ISSN
- 0168-583X
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Nd-and Er-doped silicon rich oxide (SRO) thin films were prepared by rf-sputtering. Different films were obtained by changing target configurations. Al and Al 2 O 3 targets were used to obtain along with silicon rich silicon oxide (SRSO) films, Al-modified SRSO films and silicon rich aluminosilicate
We have measured effective attenuation lengths (EALs) of 140-1100 eV electrons in ultrathin silicon dioxide layers using synchrotron radiation. These EALs were generally smaller than those reported previously, although there was agreement with the values measured by Hochella and Carim (Surf. Sci. Le