Photoluminescence and radiation damage in W, Mg, Ca doped Bi4Ge3O12 crystals

✍ Scribed by Pingsheng Yu; Liangbi Su; Huili Tang; Hengyu Zhao; Xin Guo; Qiuhong Yang; Jun Xu

• Publisher: John Wiley and Sons
• Year: 2011
• Tongue: English
• Weight: 179 KB
• Volume: 46
• Category: Article
• ISSN: 0232-1300
• DOI: 10.1002/crat.201000654

✦ Synopsis

Bi 4 Ge 3 O 12 , gamma radiation, ultraviolet radiation. Spectral properties and radiation damage in W, Mg and Ca doped Bi 4 Ge 3 O 12 (W:BGO, Mg:BGO, Ca:BGO) crystals before and after thermal treatment and gamma-ray (γ-) or ultraviolet (UV) radiation were studied. The absorption and the photoluminescence (PL) spectra of doped BGO crystals in visible region were measured. Before γ or UV radiation, the emission intensity of W:BGO crystal is stronger than that of pure BGO at about 500 nm. After γ radiation (10k Gy), the emission intensities of doped BGO are all weaker than pure BGO under identically condition. However, the emission intensity of W:BGO is stronger than that of pure BGO after UV exposure (10k Gy). Thermal treated (annealed in N 2 at 550 °C for 6 h) W:BGO has shown a much stronger emission intensity than others.