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Photoluminescence and dark current of p-doped InGaAs/AlxGa1−xAs strained multiple quantum wells

✍ Scribed by D.H. Zhang; S.F. Yoon; K. Radhakrishnan; Z.Y. Han


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
215 KB
Volume
20
Category
Article
ISSN
0749-6036

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