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Photoluminescence and capacitance transients in highly Mg-doped GaN

✍ Scribed by L. Lu; C.L. Yang; H. Yan; H. Yang; Z. Wang; J. Wang; W. Ge

Book ID
106024174
Publisher
Springer
Year
2002
Tongue
English
Weight
124 KB
Volume
75
Category
Article
ISSN
1432-0630

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## Abstract Photoluminescence (PL) properties are reported for a set of __m__‐plane GaN films with Mg doping varied from mid 10^18^ cm^βˆ’3^ to above 10^20^ cm^βˆ’3^. The samples were grown with MOCVD at reduced pressure on low defect density bulk GaN templates. The sharp line near bandgap bound excito