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Photoluminescence analysis of Te-doped In0.14Ga0.86As0.13Sb0.87 epitaxial layers as a function of temperature

✍ Scribed by J. Díaz-Reyes; J. G. Mendoza-Álvarez; J. Cardona-Bedoya; M. L. Gómez-Herrera; J. L. Herrera-Perez

No coin nor oath required. For personal study only.

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