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Photoexcited carrier diffusion in self-assembled InAs/GaAs quantum dots with different dot densities

✍ Scribed by A.F.G Monte; F.V de Sales; S.W da Silva; M.A.G Soler; J.M.R Cruz; P.C Morais; M.J da Silva; A.A Quivy; J.R Leite


Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
65 KB
Volume
17
Category
Article
ISSN
1386-9477

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Molecular beam epitaxy has been used for growing self-assembled InAs quantum dots. A continuous variation of the InAs average coverage across the sample has been obtained by properly aligning the (001) GaAs substrate with respect to the molecular beam. Excitation of a large number of dots (laser spo