Photoelectrochemical etching of cone-shaped macropores in N-type Si for solar cell texturization
✍ Scribed by Wang, X. ;Tebib, A. ;Veschetti, Y. ;Bastide, S.
- Publisher
- John Wiley and Sons
- Year
- 2010
- Tongue
- English
- Weight
- 498 KB
- Volume
- 208
- Category
- Article
- ISSN
- 0031-8965
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✦ Synopsis
Abstract
Macropore formation by photoelectrochemical (PEC) etching of N‐type crystalline Si under front side illumination has been investigated. We report on two important parameters that influence the pore morphology: the applied anodic bias and the spectral distribution of the illumination source. On (100) c‐Si, the pore morphology changes from a round shape at low bias (0 V/NHE) to a conical shape at high bias (2 V/NHE). In the latter case we show that, by adjusting the spectrum of the white light source with longpass filters of different cut‐on wavelengths, we can control the cone angle of the pores from 50° with white light to 10° with infrared light. Optical measurements indicate that macropores formed with a narrow cone angle (20°) could be of interest for Si solar cell texturization since they result in a very low reflectivity (2.6% at 800 nm) and in an efficient light trapping.